S. Shimamoto, Y. Yanagida, S. Shirakawa, K. Miyakoshi, T. Imai, T. Oshima, J. Sakano, S. Wada
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High performance Pch-LDMOS transistors in wide range voltage from 35V to 200V SOI LDMOS platform technology
We have developed high performance Pch-LDMOS transistors in wide range rated voltage from 35V to 200V SOI LDMOS platform technology. By applying a novel channel structure, a high saturation drain current of 172 μA/μm in the 200V Pch-LDMOS transistor was achieved, which is comparable to that of the Nch-LDMOS transistor. A low on-resistance of 3470 mΩ∗ mm2 was obtained while maintaining high on- and off-state breakdown voltages of −240 and −284 V. The 35V to 200V LDMOS transistors with a competitive low on-resistance were also demonstrated by layout optimization such as RESURF structure and field plate.
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