0.5 /spl mu/m功率phemt的射频超速实验

1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI:10.1109/GAASRW.1999.874136

V. Kaper, P. Ersland

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引用次数: 4

摘要

以M/A-COM 0.5 /spl mu/ M功率phemt为实验对象，研究了大信号驱动对器件长期可靠性的影响，并对器件在正常栅极和加速漏极偏置条件下的高压缩工况(RF超驱动工况)进行了应力分析。在应力过程中，每5分钟进行一次完整的直流表征和输入/输出功率测量。

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RF overdrive experiments on 0.5 /spl mu/m power pHEMTs

The effect of large signal drive on long-term device reliability was investigated on M/A-COM 0.5 /spl mu/m power pHEMTs with 600 /spl mu/m gate periphery by stressing devices on-wafer at normal gate and accelerated drain bias conditions with various RF input drives in the high compression regime (RF overdrive condition). Complete DC characterization and input/output power measurements were performed every 5 minutes during the stress.

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来源期刊

1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)

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