研究了在外部微波信号影响下隧道二极管上发生器的性能

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827852

A. Abramov

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引用次数: 0

摘要

本文给出了考虑自由载流子加热引起隧道二极管(TD)发生器I-V特性变化的外部微波信号作用下隧道二极管(TD)发生器性能的计算机模拟结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The research of performances of the generator on the tunnel diode at the influence of an external microwave signal

In this work the results of a computer simulation of the performance of a tunnel diode (TD) generator under the influence of an external microwave signal taking into consideration the change of the TD I-V characteristics because of the heating of the free charge carriers are presented.

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Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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