M. Lemme, T. Mollenhauer, W. Henschel, T. Wahlbrink, H. Gottlob, J. Efavi, M. Baus, O. Winkler, B. Spangenberg, H. Kurz
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Subthreshold characteristics of p-type triple-gate MOSFETs
The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, the output and transfer characteristics of 70 nm printed gate length pMOSFETs with 22 nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
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