M. De matos, E. Kerhervé, H. Lapuyade, J. Bégueret, Y. Deval
{"title":"集成电路的毫米波和功率特性","authors":"M. De matos, E. Kerhervé, H. Lapuyade, J. Bégueret, Y. Deval","doi":"10.1109/EAEEIE.2009.5335500","DOIUrl":null,"url":null,"abstract":"This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60GHz and 77GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.","PeriodicalId":220847,"journal":{"name":"2009 EAEEIE Annual Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Millimeter-wave and power characterization for integrated circuits\",\"authors\":\"M. De matos, E. Kerhervé, H. Lapuyade, J. Bégueret, Y. Deval\",\"doi\":\"10.1109/EAEEIE.2009.5335500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60GHz and 77GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.\",\"PeriodicalId\":220847,\"journal\":{\"name\":\"2009 EAEEIE Annual Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 EAEEIE Annual Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EAEEIE.2009.5335500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 EAEEIE Annual Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EAEEIE.2009.5335500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Millimeter-wave and power characterization for integrated circuits
This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60GHz and 77GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.