一种新的氧化氮化和再氧化模拟方法

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871227

N. Kusunoki, T. Shimizu, H. Hazama, N. Aoki

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引用次数: 0

摘要

我们提出了一种新颖的模型，能够准确和实用地模拟在硅衬底上生长氮化氧薄膜。在氮化氧膜的生长过程中，硅表面的氧化和氮原子在氮化氧膜中的掺入是同时发生的。由于氮化氧薄膜中的氮原子，氮化氧薄膜的生长速度与SiO/sub /薄膜的生长速度有很大的不同。我们扩展了一个依赖于氮化氧膜中氮浓度的氧化剂扩散模型。在这个模型中，氧化剂的扩散率是氮浓度的函数。我们将该模型应用于几种氮化氧化过程和氮化氧化膜的再氧化过程的模拟。仿真结果与实验结果吻合较好。

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A novel simulation method for oxynitridation and re-oxidation

We proposed a novel model to enable accurate and practical simulations for a growth of oxynitride film on a Si substrate. In the growth of the oxynitride film, oxidation of the Si surface and the incorporation of nitrogen atoms in the oxynitride film occur simultaneously. Due to the nitrogen atoms in the oxynitride film, the growth rate of the oxynitride film is quite different from that of SiO/sub 2/ film. We extended an oxidant diffusion model that depends on the nitrogen concentration in the oxynitride film. In this model, the oxidant diffusivity is a function of the nitrogen concentration. We apply the model to the simulations of several oxynitride processes and re-oxidation of the oxynitride films. The simulation results show good agreement with experimental results.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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