未来用于计算应用的高密度存储器:设备行为和建模挑战

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604521

G. Spadini, I. Karpov, D. Kencke

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引用次数: 4

摘要

比较了现有和正在研究的存储元件在计算机存储应用中的适用性。发现具有匹配隔离装置的相变元件交叉点阵列特别有吸引力，并分析了其建模的挑战。

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Future high density memories for computing applications: Device behavior and modeling challenges

Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.

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来源期刊

2010 International Conference on Simulation of Semiconductor Processes and Devices

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