用于精确门级电路分析和时序分析的组合逻辑门电流源模型

Kai Chen, Young Hwan Kim
{"title":"用于精确门级电路分析和时序分析的组合逻辑门电流源模型","authors":"Kai Chen, Young Hwan Kim","doi":"10.1109/VLSI-DAT.2015.7114529","DOIUrl":null,"url":null,"abstract":"Many current source models (CSMs) have been proposed for the gate-level circuit analysis and timing analysis for sub-90-nm CMOS designs during the past decade. However, most of them may suffer from large delay errors for multiple-stages of combinational logic gates. This paper presents an extended CSM which can provide high accuracy in both single-stage and multiple-stage combinational logic gates. The proposed CSM consists of voltage-controlled current source, input and output parasitic capacitances, Miller capacitance and calibration input capacitance parallel to the characterized input capacitance. The calibration input capacitance helps to model the input node more accurately. In experiments, the proposed CSM outperformed the benchmark CSMs in the average root-mean squared error (RMSE) and the average 50%-to-50% gate delay error.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current source model of combinational logic gates for accurate gate-level circuit analysis and timing analysis\",\"authors\":\"Kai Chen, Young Hwan Kim\",\"doi\":\"10.1109/VLSI-DAT.2015.7114529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Many current source models (CSMs) have been proposed for the gate-level circuit analysis and timing analysis for sub-90-nm CMOS designs during the past decade. However, most of them may suffer from large delay errors for multiple-stages of combinational logic gates. This paper presents an extended CSM which can provide high accuracy in both single-stage and multiple-stage combinational logic gates. The proposed CSM consists of voltage-controlled current source, input and output parasitic capacitances, Miller capacitance and calibration input capacitance parallel to the characterized input capacitance. The calibration input capacitance helps to model the input node more accurately. In experiments, the proposed CSM outperformed the benchmark CSMs in the average root-mean squared error (RMSE) and the average 50%-to-50% gate delay error.\",\"PeriodicalId\":369130,\"journal\":{\"name\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI Design, Automation and Test(VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-DAT.2015.7114529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI Design, Automation and Test(VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-DAT.2015.7114529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在过去的十年中,已经提出了许多电流源模型(csm)用于sub-90纳米CMOS设计的门级电路分析和时序分析。但是,对于多级组合逻辑门,它们大多存在较大的延迟误差。本文提出了一种扩展的CSM,在单级和多级组合逻辑门中都能提供较高的精度。所提出的CSM由压控电流源、输入输出寄生电容、米勒电容和与特征输入电容并联的校准输入电容组成。校正输入电容有助于更准确地建模输入节点。在实验中,所提出的CSM在平均均方根误差(RMSE)和平均50%- 50%门延迟误差方面优于基准CSM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current source model of combinational logic gates for accurate gate-level circuit analysis and timing analysis
Many current source models (CSMs) have been proposed for the gate-level circuit analysis and timing analysis for sub-90-nm CMOS designs during the past decade. However, most of them may suffer from large delay errors for multiple-stages of combinational logic gates. This paper presents an extended CSM which can provide high accuracy in both single-stage and multiple-stage combinational logic gates. The proposed CSM consists of voltage-controlled current source, input and output parasitic capacitances, Miller capacitance and calibration input capacitance parallel to the characterized input capacitance. The calibration input capacitance helps to model the input node more accurately. In experiments, the proposed CSM outperformed the benchmark CSMs in the average root-mean squared error (RMSE) and the average 50%-to-50% gate delay error.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信