{"title":"带隙工程抑制SOI mosfet的浮体效应","authors":"M. Terauchi, M. Yoshimi, A. Marakoshi, Y. Ushiku","doi":"10.1109/VLSIT.1995.520847","DOIUrl":null,"url":null,"abstract":"The floating-body effects, which are regarded as the most critical issues in applying Silicon-On-Insulator (SOI) devices to actual LSIs, can be suppressed by the reduction in bandgap energy in the source region. In addition to an increase in the drain breakdown voltage, the suppression of both kinks in I/sub d/-V/sub d/ characteristics and threshold voltage shift with an increase in drain voltage are achieved in sub-quarter micron Nch thin-film SOI MOSFETs.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Suppression of the floating-body effects in SOI MOSFETs by bandgap engineering\",\"authors\":\"M. Terauchi, M. Yoshimi, A. Marakoshi, Y. Ushiku\",\"doi\":\"10.1109/VLSIT.1995.520847\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The floating-body effects, which are regarded as the most critical issues in applying Silicon-On-Insulator (SOI) devices to actual LSIs, can be suppressed by the reduction in bandgap energy in the source region. In addition to an increase in the drain breakdown voltage, the suppression of both kinks in I/sub d/-V/sub d/ characteristics and threshold voltage shift with an increase in drain voltage are achieved in sub-quarter micron Nch thin-film SOI MOSFETs.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520847\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Suppression of the floating-body effects in SOI MOSFETs by bandgap engineering
The floating-body effects, which are regarded as the most critical issues in applying Silicon-On-Insulator (SOI) devices to actual LSIs, can be suppressed by the reduction in bandgap energy in the source region. In addition to an increase in the drain breakdown voltage, the suppression of both kinks in I/sub d/-V/sub d/ characteristics and threshold voltage shift with an increase in drain voltage are achieved in sub-quarter micron Nch thin-film SOI MOSFETs.
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