{"title":"用于存储和气体传感器的单电子晶体管和有机场效应管的发展","authors":"A. Boubaker, A. Nasri, A. Kalboussi","doi":"10.1109/DTSS.2019.8915334","DOIUrl":null,"url":null,"abstract":"Single-Electron transistor and Organic FET are very attractive devices on beyond CMOS technology. They offer the special advantages like a low power electronics for smart sensors and high flexibility for organic flush memory. In this work, we explain the operating principle of two structures with different types (Metallic/ Semiconductor SET and P-type/N-type OFET) by studying the electrical characteristics via a physically based device simulator. We propose a new models and applications for data storage and gas sensor using new nanomaterials (C60). We study an experimental-neuromorphic circuit emulating synapse and neuron functions.","PeriodicalId":342516,"journal":{"name":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Development of Single-Electron Transistor and Organic FET for Memory and Gas Sensor Applications\",\"authors\":\"A. Boubaker, A. Nasri, A. Kalboussi\",\"doi\":\"10.1109/DTSS.2019.8915334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-Electron transistor and Organic FET are very attractive devices on beyond CMOS technology. They offer the special advantages like a low power electronics for smart sensors and high flexibility for organic flush memory. In this work, we explain the operating principle of two structures with different types (Metallic/ Semiconductor SET and P-type/N-type OFET) by studying the electrical characteristics via a physically based device simulator. We propose a new models and applications for data storage and gas sensor using new nanomaterials (C60). We study an experimental-neuromorphic circuit emulating synapse and neuron functions.\",\"PeriodicalId\":342516,\"journal\":{\"name\":\"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTSS.2019.8915334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTSS.2019.8915334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of Single-Electron Transistor and Organic FET for Memory and Gas Sensor Applications
Single-Electron transistor and Organic FET are very attractive devices on beyond CMOS technology. They offer the special advantages like a low power electronics for smart sensors and high flexibility for organic flush memory. In this work, we explain the operating principle of two structures with different types (Metallic/ Semiconductor SET and P-type/N-type OFET) by studying the electrical characteristics via a physically based device simulator. We propose a new models and applications for data storage and gas sensor using new nanomaterials (C60). We study an experimental-neuromorphic circuit emulating synapse and neuron functions.