超大规模集成电路中场效应管技术的发展

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189349

H.N. Yu, A. Reisman, C. Osburn, D. Critchlow, T. Chang

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引用次数: 3

摘要

概述了利用电子束光刻技术开发用于VLSI应用的1 μ m MOSFET技术。该技术的各个方面，包括设备设计，阈值稳定性，可靠性研究，尺寸控制和性能评估将简要回顾。基于器件测试芯片和电路测试芯片的实验结果将作为在VLSI芯片环境下器件设计和电路性能的验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The evolution of FET technology for VLSI applications

An overview of the development of a 1 µm MOSFET technology using electron beam lithography for VLSI applications is described. Various aspects of the technology including device design, threshold stability, reliability studies, dimensional control and performance evaluation will be reviewed briefly. Experimental results based on a device test chip and a circuit test chip will be presented as confirmation of device design and circuit performance in a VLSI chip environment.

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1978 International Electron Devices Meeting

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