F. Kuo, Seyednaser Pourmousavian, T. Siriburanon, Ron Chen, Lan-chou Cho, C. Jou, F. Hsueh, R. Staszewski
{"title":"一种用于蓝牙LE的0.5V 1.6mW 2.4GHz分数n全数字锁相环,具有pvt不敏感的TDC,采用28nm CMOS开关电容倍频器","authors":"F. Kuo, Seyednaser Pourmousavian, T. Siriburanon, Ron Chen, Lan-chou Cho, C. Jou, F. Hsueh, R. Staszewski","doi":"10.23919/vlsic.2017.8008472","DOIUrl":null,"url":null,"abstract":"This paper proposes an ultra-low-voltage (ULV) fractional-N all-digital PLL (ADPLL) powered from a single 0.5 V supply. While its DCO runs directly at 0.5 V, a switched-capacitor DC-DC converter doubles the supply voltage to all the digital circuitry and regulates the TDC supply to stabilize its resolution thus maintaining fixed inband phase noise (PN) across PVT. The ADPLL supports a 2-point modulation and forms a Bluetooth LE (BLE) transmitter realized in 28 nm CMOS. It achieves in-band PN of −106 dBc/Hz (FoM of −239.2 dB) and RMS jitter of 0.86ps while dissipating only 1.6mW at 40 MHz reference. The power consumption reduces to 0.8 mW during BLE transmission when the DCO switches to open-loop.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 0.5V 1.6mW 2.4GHz fractional-N all-digital PLL for Bluetooth LE with PVT-insensitive TDC using switched-capacitor doubler in 28nm CMOS\",\"authors\":\"F. Kuo, Seyednaser Pourmousavian, T. Siriburanon, Ron Chen, Lan-chou Cho, C. Jou, F. Hsueh, R. Staszewski\",\"doi\":\"10.23919/vlsic.2017.8008472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes an ultra-low-voltage (ULV) fractional-N all-digital PLL (ADPLL) powered from a single 0.5 V supply. While its DCO runs directly at 0.5 V, a switched-capacitor DC-DC converter doubles the supply voltage to all the digital circuitry and regulates the TDC supply to stabilize its resolution thus maintaining fixed inband phase noise (PN) across PVT. The ADPLL supports a 2-point modulation and forms a Bluetooth LE (BLE) transmitter realized in 28 nm CMOS. It achieves in-band PN of −106 dBc/Hz (FoM of −239.2 dB) and RMS jitter of 0.86ps while dissipating only 1.6mW at 40 MHz reference. The power consumption reduces to 0.8 mW during BLE transmission when the DCO switches to open-loop.\",\"PeriodicalId\":176340,\"journal\":{\"name\":\"2017 Symposium on VLSI Circuits\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/vlsic.2017.8008472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/vlsic.2017.8008472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5V 1.6mW 2.4GHz fractional-N all-digital PLL for Bluetooth LE with PVT-insensitive TDC using switched-capacitor doubler in 28nm CMOS
This paper proposes an ultra-low-voltage (ULV) fractional-N all-digital PLL (ADPLL) powered from a single 0.5 V supply. While its DCO runs directly at 0.5 V, a switched-capacitor DC-DC converter doubles the supply voltage to all the digital circuitry and regulates the TDC supply to stabilize its resolution thus maintaining fixed inband phase noise (PN) across PVT. The ADPLL supports a 2-point modulation and forms a Bluetooth LE (BLE) transmitter realized in 28 nm CMOS. It achieves in-band PN of −106 dBc/Hz (FoM of −239.2 dB) and RMS jitter of 0.86ps while dissipating only 1.6mW at 40 MHz reference. The power consumption reduces to 0.8 mW during BLE transmission when the DCO switches to open-loop.