用于高性能模拟和数字电路的BiCMOS

H. Pfleiderer, A. Wieder, K. Hart
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引用次数: 3

摘要

由于其高封装密度、低功耗和易于设计,CMOS近年来已成为超大规模集成电路的标准技术。与CMOS相比,双极技术提供了更好的模拟特性,例如失调电压以及独特的速度优势。例如,ECL处理器的时钟速率超过100MHz,而CMOS处理器的时钟速率通常为30MHz。因此,双极和CMOS器件形成了理想的组合。唯一的缺点是在相同的芯片上制造它们的成本更高。由于额外的掩膜、加工步骤和产量降低,BiCMOS工艺比CMOS工艺成本更高。然而,由于双极和CMOS技术的融合,今天的成本因素不像早些年那么严重。本报告描述了用于数字和模拟功能的高速/高密度电路的BiCMOS技术。首先比较了MOS器件和双极器件的特点。接下来将介绍设计BiCMOS工艺的不同方面。最后阐述了BiCMOS技术在系统应用中的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BiCMOS for High Performance Analog and Digital Circuits
As a result of its high packing density, low power dissipation and ease of design, CMOS has in recent years emerged as the standard technology for VLSI circuits. Compared to CMOS, bipolar technology offers better analog features, e.g. offset voltage as well as unique speed advantages. ECL processors, for example, operate at clock rates over 100MHz whereas CMOS processors operate typically at 30MHz. Thus bipolar and CMOS devices form an ideal combination. The only drawback is the higher cost of their fabrication on the same chip. BiCMOS processes are more costly than CMOS processes due to additional masks, processing steps and reduced yield. However, this cost factor is less severe today than in earlier years because of the convergence of bipolar and CMOS technologies. This report describes BiCMOS techniques for high-speed/ high-density circuits for digital as well as analog functions. First the features of MOS and bipolar devices are compared. The different aspects of designing a BiCMOS process are described next. Finally the advantages of the BiCMOS technology for systems applications are demonstrated.
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