O. López-L, I. Martinez-R, D. Durini, D. Ferrusca, E. Gutiérrez-D., A. Ortiz-Conde
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Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K
In this article, we present a method to extract the parameters of MOSFETs at temperatures ranging from 3.8 K to 300 K. The method only requires simple DC measurements on a single test device in the triode region. The extracted parameters are: the threshold voltage, the series resistance, the mobility and the critical field at which the carriers are velocity saturated. We also show that mobility degradation, series resistance and velocity saturation produce equivalent effects in the triode region.
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