一种新的原位电阻测量方法，用于提取CoSn三维叠层的IMC电阻率和动力学参数

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309244

L. Hou, J. Derakhshandeh, J. de Coster, Teng Wang, V. Cherman, P. Bex, K. Rebibis, Geert Van De Plas, G. Beyer, E. Beyne, I. De Wolf

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引用次数: 2

摘要

钴基UBM(在凹凸金属化下)具有较少的UBM消耗，单一和韧性的IMC(金属间化合物))和没有Kirkendall空洞形成的优点，这使得它非常适合3D堆积，特别是在细间距微凸起中。本文首次采用原位电阻测量的方法研究了Co-Sn内嵌复合材料的电学性能和生长动力学。提取的参数通过常规的截面扫描电镜分析进行验证。该技术具有非破坏性，快速和准确的测量任何UBM和焊接材料的3D应用的优点。

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A novel in-situ resistance measurement to extract IMC resistivity and kinetic parameter for CoSn 3D stacks

Cobalt based UBM (under bump metallization) has the advantages of less UBM consumption, single and ductile IMC (intermetallic compound)) and no Kirkendall voids formation which makes it interesting for 3D stacking specially in fine pitch microbumps. In this paper for first time the electrical properties of Co-Sn IMC and kinetics of IMC growth are investigated by in-situ resistance measurement. Extracted parameters are verified by conventional cross section SEM analysis. This technique has the advantages of being non-destructive, quick and accurate measurement for any UBM and solder materials for 3D applications.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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