硅纳米线悬浮FET生物传感器的电学和pH传感特性

Kihyun Kim, Chanoh Park, T. Rim, M. Meyyappan, Jeong-Soo Lee
{"title":"硅纳米线悬浮FET生物传感器的电学和pH传感特性","authors":"Kihyun Kim, Chanoh Park, T. Rim, M. Meyyappan, Jeong-Soo Lee","doi":"10.1109/NANO.2014.6968007","DOIUrl":null,"url":null,"abstract":"The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction- free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors\",\"authors\":\"Kihyun Kim, Chanoh Park, T. Rim, M. Meyyappan, Jeong-Soo Lee\",\"doi\":\"10.1109/NANO.2014.6968007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction- free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.\",\"PeriodicalId\":367660,\"journal\":{\"name\":\"14th IEEE International Conference on Nanotechnology\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"14th IEEE International Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2014.6968007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2014.6968007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

研究了悬浮纳米线(NW-SUS)离子敏感场效应晶体管(isfet)中纳米线宽度与无粘性结构的关系,以及粘性对其电性能的影响。采用先进的微细加工技术,成功制备了无约束的NW-SUS isfet。无粘滞的NW-SUS isfet由于栅极全能(GAA)结构而具有优异的电特性。此外,与传统器件相比,无伸缩的NW-SUS isfet在pH传感方面表现出更高的灵敏度。这些研究为未来开发高灵敏度传感器平台提供了契机。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors
The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction- free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.
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