{"title":"Tft/lcd平板显示状态","authors":"T. Tsukada","doi":"10.1109/DRC.1991.664662","DOIUrl":null,"url":null,"abstract":"Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta/sub 2/O/sub 5//SiN or Al/sub 2/O/sub 3//SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Status of Tft/lcd Flat Panel Display\",\"authors\":\"T. Tsukada\",\"doi\":\"10.1109/DRC.1991.664662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta/sub 2/O/sub 5//SiN or Al/sub 2/O/sub 3//SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta/sub 2/O/sub 5//SiN or Al/sub 2/O/sub 3//SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel. >
![[1991] 49th Annual Device Research Conference Digest](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
