批量CMOS技术中的充电损伤与产品影响

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-08-14 DOI:10.1109/ICICDT.2006.220805

T. Hook, C. Musante, D. Harmon, T. Sullivan

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引用次数: 3

摘要

在本文中，我们将几个实际设计中的180nm技术天线的特性制成表格，并显示数据表明该产品不像用于控制工艺线的测试结构那样容易受到充电损坏。该实验包括评估大量(500件)的零件样本，这些零件有相当大的工艺引起的天线损坏，但没有发现产品性能、产量或可靠性的可测量退化

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charging Damage and Product Impact in a Bulk CMOS Technology

In this paper, we tabulate the characteristics of antennas in several real designs in a 180-nm technology, and show data indicating that the product is not as susceptible to charging damage as the test structures used to control the process line. The experiment consisted of evaluating a large (500 pieces) sample of parts with considerable process-induced antenna damage - and yet no measurable degradation in product performance, yield, or reliability was found

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2006 IEEE International Conference on IC Design and Technology

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