一种用于无源RFID标签的超低功耗CMOS压控环形振荡器

Pouya Kamalinejad, Kamyar Keikhosravy, Reza Molavi, S. Mirabbasi, Victor C. M. Leung
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引用次数: 16

摘要

提出了一种用于无源超高频(UHF)射频识别(RFID)标签的超低功耗CMOS压控环振荡器(VCRO)。利用准浮栅技术对伪差分(PD)延迟单元中互补CMOS晶体管的门进行偏置。升压栅极驱动电压使差分延迟单元的供电电压小于两个堆叠晶体管所需的最小超速电压,从而促进了超低功率状态下的振荡。QFG偏置技术还提供了一个额外的控制旋钮来调整环形振荡器的输出频率。所提出的两级PD-VCRO采用标准的0.13 μm CMOS技术设计和布局。本文还提出了一个电压电平变换器,将所提出的VCRO的输出与后续电路相连接。整个VCRO核心的面积为25 μm×20 μm,当电源电压低至140 mV时,输出频率为4 MHz,功耗为3.6 nW。虽然所提出的VCRO的预期应用是无源RFID标签,但该架构可用于其他超低功耗应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra-low-power CMOS voltage-controlled ring oscillator for passive RFID tags
An ultra-low-power CMOS voltage-controlled ring oscillator (VCRO) for passive ultra-high-frequency (UHF) radio-frequency identification (RFID) tags is presented. The gates of the complementary CMOS transistors in pseudo-differential (PD) delay cells are biased through quasi-floating gate (QFG) technique. The boosted gate-drive voltage enables operation of the differential delay cells with supply voltages smaller than the minimum required overdrive voltage of the two stacked transistors and accordingly facilitates the oscillation at ultra-Iow-power regime. QFG biasing technique also offers an additional control knob to tune the output frequency of the ring oscillator. The proposed two-stage PD-VCRO is designed and laid-out in a standard 0.13-μm CMOS technology. A voltage level converter is also presented to interface the output of the proposed VCRO with the succeeding circuitry. The entire VCRO core occupies an area of 25 μm×20 μm For a supply voltage of as low as 140 mV, an output frequency of 4 MHz is achieved at 3.6 nW power consumption. Although the intended application for the proposed VCRO is passive RFID tags, the architecture can be used in other ultra-low-power applications.
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