H. Campanella, Nan Wang, M. Narducci, J. Soon, C. Ho, Chengkuo Lee, A. Gu
{"title":"射频MEMS谐振器和声子晶体的集成，用于高频应用，具有频率选择性热管理和高效功率处理","authors":"H. Campanella, Nan Wang, M. Narducci, J. Soon, C. Ho, Chengkuo Lee, A. Gu","doi":"10.1109/IEDM.2014.7047102","DOIUrl":null,"url":null,"abstract":"We report a radio frequency micro electromechanical system (RFMEMS) device integrated with phononic crystals (PnC) that provide a Lamb-wave resonator with frequency-selective heat management, power handling capability, and more efficient electromechanical coupling at ultra high frequency (UHF) and low microwave bands. The integrated device is fabricated in a silicon-on-insulator (SOI) aluminum nitride (AlN) platform and boosts thermal performance by 40%, power handling by 3 dB, and coupling coefficient by three times. Design approach is scalable to higher frequencies.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Integration of RF MEMS resonators and phononic crystals for high frequency applications with frequency-selective heat management and efficient power handling\",\"authors\":\"H. Campanella, Nan Wang, M. Narducci, J. Soon, C. Ho, Chengkuo Lee, A. Gu\",\"doi\":\"10.1109/IEDM.2014.7047102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a radio frequency micro electromechanical system (RFMEMS) device integrated with phononic crystals (PnC) that provide a Lamb-wave resonator with frequency-selective heat management, power handling capability, and more efficient electromechanical coupling at ultra high frequency (UHF) and low microwave bands. The integrated device is fabricated in a silicon-on-insulator (SOI) aluminum nitride (AlN) platform and boosts thermal performance by 40%, power handling by 3 dB, and coupling coefficient by three times. Design approach is scalable to higher frequencies.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration of RF MEMS resonators and phononic crystals for high frequency applications with frequency-selective heat management and efficient power handling
We report a radio frequency micro electromechanical system (RFMEMS) device integrated with phononic crystals (PnC) that provide a Lamb-wave resonator with frequency-selective heat management, power handling capability, and more efficient electromechanical coupling at ultra high frequency (UHF) and low microwave bands. The integrated device is fabricated in a silicon-on-insulator (SOI) aluminum nitride (AlN) platform and boosts thermal performance by 40%, power handling by 3 dB, and coupling coefficient by three times. Design approach is scalable to higher frequencies.
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