以SiO/ sub2 /薄膜为栅绝缘子的MIS - AlGaN/GaN HEMTs的研究

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488012

M. Sugimoto, M. Kodama, N. Soejima, E. Hayashi, T. Uesugi, T. Kachi

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引用次数: 3

摘要

研究了GaN基miss - hemt的栅极绝缘子形成方法。用HTO沉积法制备的SiO2薄膜(HTO薄膜)具有优异的性能。HTO/GaN结构的界面态密度为2E11 eV -1 cm -2，击穿场为8.2 MV/cm。利用HTO薄膜制备了mis_algan /GaN hemt。栅极宽度为100Pm的MIS-HEMT的最大漏极电流为395 mA/mm，比导通电阻为1.7 m: cm 2。栅极宽度为31.04 mm的大功率MIS-HEMT的最大漏极电流大于

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A Study of MIS - AlGaN/GaN HEMTs with SiO/sub 2/ Films as Gate Insulator

Gate insulator formation methods for GaN based MIS-HEMTs were examined. A SiO2 film formed with the HTO deposition method (HTO film) showed excellent properties. The interface state density of the HTO/GaN structure was 2E11 eV -1 cm -2 and the breakdown field was 8.2 MV/cm. MIS-AlGaN/GaN HEMTs were fabricated using the HTO film. A MIS-HEMT with a gate width of 100Pm was characterized by a maximum drain current of 395 mA/mm and a specific on-resistance of 1.7 m:� cm 2 . A high power MIS-HEMT with a gate width of 31.04 mm showed a maximum drain current of more

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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