S. Noujaim, R. Hartley, H. Cline, R. Jerdonek, S. Ludke
{"title":"用于图形计算的30MHz编译芯片组","authors":"S. Noujaim, R. Hartley, H. Cline, R. Jerdonek, S. Ludke","doi":"10.1109/ISSCC.1987.1157199","DOIUrl":null,"url":null,"abstract":"A 1.25μm CMOS chip that has attained a device density of 1500 transistors/mm2, using a silicon compiler for design, will be described. The bit-slice elements of the chip communicate serially to implement a pipeline with a throughput of 50 million multiply/accumulates/s at a 30MHz clock rate.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"30MHz compiled chip set for graphics computations\",\"authors\":\"S. Noujaim, R. Hartley, H. Cline, R. Jerdonek, S. Ludke\",\"doi\":\"10.1109/ISSCC.1987.1157199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.25μm CMOS chip that has attained a device density of 1500 transistors/mm2, using a silicon compiler for design, will be described. The bit-slice elements of the chip communicate serially to implement a pipeline with a throughput of 50 million multiply/accumulates/s at a 30MHz clock rate.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.25μm CMOS chip that has attained a device density of 1500 transistors/mm2, using a silicon compiler for design, will be described. The bit-slice elements of the chip communicate serially to implement a pipeline with a throughput of 50 million multiply/accumulates/s at a 30MHz clock rate.