矢量非傍轴高斯光束的可饱和吸收纳米光刻

S. Tofighi, M. Afsary, A. Bahrampour
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引用次数: 0

摘要

非近轴效应和矢量效应在非线性介质中高约束光束的动力学中起着重要的作用。本文以纳米光刻技术为目标,对高斯场在饱和吸收介质中的矢量非近轴传播进行了数值研究。结果表明,在纳米光刻的最优条件下,光场各分量之间的相互耦合以及不同阶的厄米-高斯模式之间的模式耦合导致在可饱和吸收介质中传播时产生各种图案。矢量效应是造成对称性破坏的原因。对于会聚输入光束,当光束的强度部分向焦点方向移动时,光束轮廓的低强度部分被消除。最后,在最小光斑尺寸为几十纳米的位置恢复高斯分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Saturable absorber nanolithography by vectorial nonparaxial Gaussian beam
The non-paraxial and vectorial effects have an important role in the dynamics of highly confined beam in nonlinear medium. In this paper, we study the vectorial non-paraxial propagation of Gaussian field in the saturable absorber media numerically with the aim of nano-lithography. It is shown that in the optimal regimes for nanolithography, the mutual coupling between components of optical field and mode coupling between different orders of Hermite-Gaussian mode lead to generation of various patterns upon propagation through saturable absorber media. The vectorial effect is responsible for the symmetry breaking. For converging input beam, while the intense part of the beam goes toward the focal point, the low intensity parts of beam profile are eliminated. Finally, the Gaussian profile is recovered at the location of minimum spot size which is of the order of several tens of nanometer.
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