嵌入式STT-MRAM用于节能和经济高效的移动系统

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894354

Seung H. Kang

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引用次数: 50

摘要

STT-MRAM是一种逻辑友好的非易失性存储器，可以实现高速度，低能量和高耐用性的组合。嵌入式STT-MRAM不仅适用于新兴的低备用电源连接系统，如可穿戴设备，物联网(IOT)和安全元件，而且还适用于高性能移动SOC作为嵌入式非易失性工作存储器。随着最近基于cofeb的垂直磁隧道结(MTJ)的突破，嵌入式STT-MRAM变得更加节能和经济高效，同时具有强大的数据保留功能，可扩展到高级逻辑节点。

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Embedded STT-MRAM for energy-efficient and cost-effective mobile systems

STT-MRAM is a logic-friendly nonvolatile memory that can realize a combination of high speed, low energy, and high endurance. Embedded STT-MRAM is positioned attractively not only for emerging low standby-power connectivity systems such as wearables, IOT (Internet-of-Things), and secure elements, but also for high-performance mobile SOC as an embedded nonvolatile working memory. With recent breakthroughs in CoFeB-based perpendicular magnetic tunnel junctions (MTJ), embedded STT-MRAM has become more energy-efficient and cost-effective in conjunction with robust data retention, scalable for advanced logic nodes.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量