22FFL FinFET技术中eNVM RRAM可靠性性能及建模

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9128359

Yao‐Feng Chang, J. O'Donnell, T. Acosta, R. Kotlyar, Albert B. Chen, Pedro A. Quintero, N. Strutt, O. Golonzka, C. Connor, J. Hicks

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引用次数: 7

摘要

本文首次全面研究了22FFL FinFET技术中嵌入式非易失性存储器(eNVM)电阻随机存取存储器(RRAM)的可靠性性能和建模。对RRAM保留松弛进行了表征和建模，并在纠错码(ECC)预算范围内评估了105°c -10年-1k寿命能力的产品级可靠性性能。具有汽车级II(-40°C-105°C)和5倍JEDEC回流的耐久性，可用于潜在的汽车SoC应用。基于电阻的保留遵循氧空位扩散弛豫(时间)和Arrhenius过程(温度)，为经验模型提供了洞察力，并提高了长期可靠性预测的准确性。

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eNVM RRAM reliability performance and modeling in 22FFL FinFET technology

For the first time, a comprehensive study of embedded nonvolatile memory (eNVM) resistive random access memory (RRAM) reliability performance and modeling in 22FFL FinFET technology is presented. RRAM retention relaxation is characterized and modeled, and product-level reliability performance is assessed for 105°C-10yrs-1k life time capability within error-correcting code (ECC) budget. Endurance with automotive grade II (-40°C-105°C) and 5x JEDEC reflow is demonstrated for potential automotive SoC applications. The resistance-based retention follows oxygen vacancy diffusion relaxation (time) and Arrhenius procedure (temperature), providing insight into empirical models and improving long-term reliability prediction accuracy.

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2020 IEEE International Reliability Physics Symposium (IRPS)

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