SOI中MOSFET的“纯自热效应”

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981566

Zheng Taolei, Luo Jinsheng, Zhang Xing

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引用次数: 3

摘要

利用商用二维数值模拟器MIDICI对薄SOI中高压MOSFET的自热效应进行了电热模拟。通过改变埋藏氧化物的热导率，我们可以仅仅从衬底热阻的大幅上升中提取自热效应，这被定义为纯自热效应。本文还介绍了SOI MOSFET的纯自热现象，以提高其普遍性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On "pure self-heating effect" of MOSFET in SOI

The electrothermal simulation of high-voltage MOSFET in thin SOI for self-heating effects is performed by means of MIDICI, a commercial 2-D numerical simulator. By varying the thermal conductivity of the buried oxide, we can extract the self-heating effects merely from the great rise in thermal resistance of the substrate, which are defined as the pure self-heating effect. The pure self-heating in SOI MOSFET is also presented for universality of the concept.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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