EUVL将于2019年投入生产:与掩膜相关的挑战还存在哪些?

K. Ronse, R. Jonckheere, E. Gallagher, V. Philipsen, L. van Look, E. Hendrickx, R. Kim
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引用次数: 5

摘要

业界领先的晶圆代工厂已广泛宣布EUV光刻技术,并得到ASML的证实,EUV光刻技术自今年年初开始被引入大批量生产(HVM),以实现7nm逻辑技术节点的成本效益更高的制造。很快,下一个技术节点将被引入,预计5nm的EUV层数将大幅增加。虽然EUV掩模不被认为是EUV引入HVM的第一个关键问题,但关于EUV掩模的几个项目需要更多的时间来改进,当然对于5nm及以上。本演讲将介绍几个与掩模相关的项目,如极紫外膜、替代吸收剂、极紫外掩模寿命等。最后是变形面具。本文对这些挑战的现状和展望进行了综述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EUVL is being inserted in manufacturing in 2019: What are the mask related challenges remaining?
As it has been widely announced by the leading foundries, and confirmed by ASML, EUV Lithography is being introduced into high volume manufacturing (HVM) since the beginning of this year, in order to enable a more cost-effective manufacturing for the 7nm logic technology node. Very soon, the next technology node will be introduced and the number of EUV layers at 5nm is expected to increase significantly. Although EUV masks are not regarded as the first critical issue for EUV introduction into HVM, several items with respect to EUV masks need more time for improvements, certainly for 5nm and beyond. This presentation will address several mask related items such as EUV pellicle, alternative absorber, EUV mask lifetime, etc... and finally anamorphic masks. This paper is reviewing the status and outlook for these remaining challenges.
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