{"title":"多通孔布局对铜互连电迁移性能和电流密度分布的影响","authors":"M. Lin, N. Jou, James W. Liang, K. Su","doi":"10.1109/IRPS.2009.5173363","DOIUrl":null,"url":null,"abstract":"Downstream Electromigration (EM) was studied on different multiple via structures. Structures with more via gained better EM performance improvement. Failure analysis showed different EM failure modes on these structures. Finite element analysis is applied to find out the current density profiles and their variation between these structures. Resistance increases due to EM induced void are also simulated and found to be dependent on size and location of void. The different EM results of these multiple via structures are explained with the current density results and the different diffusion patterns found.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"702 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect\",\"authors\":\"M. Lin, N. Jou, James W. Liang, K. Su\",\"doi\":\"10.1109/IRPS.2009.5173363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Downstream Electromigration (EM) was studied on different multiple via structures. Structures with more via gained better EM performance improvement. Failure analysis showed different EM failure modes on these structures. Finite element analysis is applied to find out the current density profiles and their variation between these structures. Resistance increases due to EM induced void are also simulated and found to be dependent on size and location of void. The different EM results of these multiple via structures are explained with the current density results and the different diffusion patterns found.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"702 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect
Downstream Electromigration (EM) was studied on different multiple via structures. Structures with more via gained better EM performance improvement. Failure analysis showed different EM failure modes on these structures. Finite element analysis is applied to find out the current density profiles and their variation between these structures. Resistance increases due to EM induced void are also simulated and found to be dependent on size and location of void. The different EM results of these multiple via structures are explained with the current density results and the different diffusion patterns found.