First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS)

This paper presents the first successful demonstration of cell-to-cell integrated 600 V 4H-SiC Lateral Bi-Directional MOSFET (LBiDMOS). The unit cell of the LBiDMOS is constructed by connecting two SiC MOSFET unit cells back-to-back with a common-drain configuration. By sharing the n-drift region in the middle and omitting the drain terminal, a novel and efficient structure was created. The peripheral design of the LBiDMOS was optimized in addition to the cell design to ensure blocking capabilities in both forward and reverse directions. The fabricated LBiDMOS exhibits symmetric bi-directional transfer, output, and blocking characteristics under the control of two gates. Over 600 V of breakdown voltage was achieved in both directions.