0.18µm 200V SOI-BCD技术，超低比导通电阻LDMOS汽车应用

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147740

Li Lu, Shulang Ma, Jinyu Xiao, Feng Lin, Shuxian Chen, Hong Shao, Sen Zhang, Kui Xiao, Yixin Dai, Zhihan Zhu, Jia Ma, Jiaxing Wei, Long Zhang, Siyang Liu, Weifeng Sun

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引用次数: 0

摘要

在这项工作中，开发了一个新的200V 0.18µm SOI-BCD平台，包括宽soa n&pLDMOS，低ron nLDMOS和light。值得注意的是，在低Ron nLDMOS的浅沟隔离(STI)结构下巧妙地应用了超薄n漂移，实现了超低的比导通状态电阻(Ron, sp)，比目前报道的最好的研究降低了20%，并且也没有牺牲导通状态击穿电压(BVoff)。此外，在宽soa n&pLDMOS中，在漏极侧附近设置了一个线性缓冲器，用于高导通击穿电压(BVon)。最后，对可靠性问题也进行了全面的研究，包括宽soa pLDMOS的负偏置温度不稳定性(NBTI)和nLDMOS的热载流子注入(HCI)。

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0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

In this work, a new 200V 0.18µm SOI-BCD platform has been developed comprehensively including the wide-SOA n&pLDMOS, low-Ron nLDMOS and LIGBT. It is noted that a ultra-thin N-drift has been skillfully applied below the shallow-trench-isolation (STI) structure for the low-Ron nLDMOS to realize an ultra-low specific on-state resistance (Ron, sp) with 20% decrease than the best reported study and the off-state breakdown voltage (BVoff) is also unsacrificed. Moreover, a linear buffer near the drain side has been arranged in the wide-SOA n&pLDMOS for high on-state breakdown voltage (BVon). Finally, the reliability concerns have been also investigated fully including the negative bias temperature instability (NBTI) for the wide-SOA pLDMOS and hot carrier injection (HCI) for nLDMOS.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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