一种用于脉冲应用的新型射频垂直MOSFET [UHF放大器]

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Pub Date : 2003-11-17 DOI:10.1109/IMOC.2003.1244837

P. H. Wilson

{"title":"一种用于脉冲应用的新型射频垂直MOSFET [UHF放大器]","authors":"P. H. Wilson","doi":"10.1109/IMOC.2003.1244837","DOIUrl":null,"url":null,"abstract":"This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology/spl trade/ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.","PeriodicalId":156662,"journal":{"name":"Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel RF vertical MOSFET for pulsed applications [UHF amplifier]\",\"authors\":\"P. H. Wilson\",\"doi\":\"10.1109/IMOC.2003.1244837\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology/spl trade/ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.\",\"PeriodicalId\":156662,\"journal\":{\"name\":\"Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMOC.2003.1244837\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMOC.2003.1244837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文讨论了采用功率沟槽技术实现高脉冲射频峰值功率的高击穿电压垂直DMOS射频放大器的设计结果。该射频器件在26v工作电压和5%占空比下可实现80w的功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel RF vertical MOSFET for pulsed applications [UHF amplifier]

This paper discusses the results of a high breakdown voltage vertical DMOS RF amplifier that employs power trench technology/spl trade/ to achieve high pulse RF peak power. The RF device can achieve a power of 80 W at an operating voltage of 26 V and a 5% duty cycle.

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Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)

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