M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans
{"title":"低温分子束外延砷化镓中硅和铍局域振动模式的红外吸收","authors":"M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans","doi":"10.1109/SIM.1992.752691","DOIUrl":null,"url":null,"abstract":"The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"606 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs\",\"authors\":\"M. O. Manasreh, C. E. Stutz, J. Solomon, M. Mier, R. Kaspi, K. Evans\",\"doi\":\"10.1109/SIM.1992.752691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"606 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs
The incorporation of silicon donor (SiGa) and beryllium acceptor (BeGa) impurities in molecular beam epitaxial GaAs is studied as a function of growth temperature (Tg) by measuring their localized vibrational modes (LVMs) at 77 K using the infrared absorption technique. The total integrated absorption of the SiGa and BeGa LVMs observed at 383.5 and 482.0 cm/sup -1/, respectively, is decreased as Tg decreases. The SiGa and BeGa LVMs in samples grown at Tg /spl ges/ 350 /spl deg/C are observed only after reducing the free carrier absorption by irradiating the samples with a 2.1 MeV electron beam [doses /spl sim/(5-l0)x10/sup 17/ cm/sup -2/. On the other hand, the secondary ion mass spectrometry (SIMS) show that the densities of Si and Be atoms remain approximately constant as Tg decreases. The reduction of the total integrated absorption of SiGa and BeGa LVMs as Tg is decreased suggests a nonsubstitutional incorporation of these impurities in samples grown at at low temperature.
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