高压产品在负电流触发(NCT)闭锁试验期间的内部电路损坏

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532069

Jian-Hsing Lee, C. Kung, E. Kung, Dao-Hong Yang, J. Shih

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引用次数: 6

摘要

发现了一种新的高压产品在负电流触发闭锁试验过程中的失效机理。从故障分析和仿真结果来看，故障是由于寄生双极晶体管意外导通导致稳压器故障导致低压元件损坏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The internal circuit damage of a high-voltage product during the negative-current-triggered (NCT) latch-up test

A novel failure mechanism of the high-voltage (HV) product during the negative-current-triggered (NCT) latch-up test is found. From the failure analysis and simulation results, the failure is identified as the unexpected parasitic-bipolar transistors turn-on induced the regulator malfunction to result in the low-voltage (LV) component damage.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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