{"title":"特别会议8B: SSD的嵌入式教程挑战","authors":"M. d'Abreu, Amitava Mazumdar","doi":"10.1109/VTS.2013.6548921","DOIUrl":null,"url":null,"abstract":"Nand Flash memory is the NVM technology of choice for solid storage devices. This tutorial will give an introduction to Flash Non Volatile Memory (NVM). Nand Flash will be discussed in detail. For completeness the tutorial will present Nor Flash as well as the roles for Nand and Nor Flash. The second part of the tutorial will be focused on issues related to reliability and endurance. Despite the advantages, NAND-based storage systems are not without challenges. For the next decade, Flash storage systems are expected to provide solutions with reduced product costs, further improved read/write performance at low power consumption, as well as better data integrity for the users. Growth in storage demand is phenomenal, which leads to the adoption of more aggressive technology to keep cost reasonable. This further leads to using smaller cells (∼10nm in geometry), as well as more bits/cell to improve storage density, as well as cost. Newer physical storage media requires closer system-level interaction to make the system feasible for reliable data storage solution. State-of-the-art error correcting coding (ECC) solution, as well as advanced digital signal processing (DSP) techniques, will be deployed to make future flash media reliable for all data storage customers. In addition, new system solutions will provide the NAND-based storage system longer endurance and better data retention.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Special session 8B: Embedded tutorial challenges in SSD\",\"authors\":\"M. d'Abreu, Amitava Mazumdar\",\"doi\":\"10.1109/VTS.2013.6548921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nand Flash memory is the NVM technology of choice for solid storage devices. This tutorial will give an introduction to Flash Non Volatile Memory (NVM). Nand Flash will be discussed in detail. For completeness the tutorial will present Nor Flash as well as the roles for Nand and Nor Flash. The second part of the tutorial will be focused on issues related to reliability and endurance. Despite the advantages, NAND-based storage systems are not without challenges. For the next decade, Flash storage systems are expected to provide solutions with reduced product costs, further improved read/write performance at low power consumption, as well as better data integrity for the users. Growth in storage demand is phenomenal, which leads to the adoption of more aggressive technology to keep cost reasonable. This further leads to using smaller cells (∼10nm in geometry), as well as more bits/cell to improve storage density, as well as cost. Newer physical storage media requires closer system-level interaction to make the system feasible for reliable data storage solution. State-of-the-art error correcting coding (ECC) solution, as well as advanced digital signal processing (DSP) techniques, will be deployed to make future flash media reliable for all data storage customers. In addition, new system solutions will provide the NAND-based storage system longer endurance and better data retention.\",\"PeriodicalId\":138435,\"journal\":{\"name\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2013.6548921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 31st VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2013.6548921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Special session 8B: Embedded tutorial challenges in SSD
Nand Flash memory is the NVM technology of choice for solid storage devices. This tutorial will give an introduction to Flash Non Volatile Memory (NVM). Nand Flash will be discussed in detail. For completeness the tutorial will present Nor Flash as well as the roles for Nand and Nor Flash. The second part of the tutorial will be focused on issues related to reliability and endurance. Despite the advantages, NAND-based storage systems are not without challenges. For the next decade, Flash storage systems are expected to provide solutions with reduced product costs, further improved read/write performance at low power consumption, as well as better data integrity for the users. Growth in storage demand is phenomenal, which leads to the adoption of more aggressive technology to keep cost reasonable. This further leads to using smaller cells (∼10nm in geometry), as well as more bits/cell to improve storage density, as well as cost. Newer physical storage media requires closer system-level interaction to make the system feasible for reliable data storage solution. State-of-the-art error correcting coding (ECC) solution, as well as advanced digital signal processing (DSP) techniques, will be deployed to make future flash media reliable for all data storage customers. In addition, new system solutions will provide the NAND-based storage system longer endurance and better data retention.