{"title":"载流子域磁强计:一种新型硅磁场传感器","authors":"M. Manley, G. G. Bloodworth","doi":"10.1049/IJ-SSED:19780054","DOIUrl":null,"url":null,"abstract":"The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"The carrier-domain magnetometer: a novel silicon magnetic field sensor\",\"authors\":\"M. Manley, G. G. Bloodworth\",\"doi\":\"10.1049/IJ-SSED:19780054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The carrier-domain magnetometer: a novel silicon magnetic field sensor
The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.
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