{"title":"增强互连可靠性的溅射ti掺杂Al-Si","authors":"F. Fischer, F. Neppl","doi":"10.1109/IRPS.1984.362043","DOIUrl":null,"url":null,"abstract":"It is shown that an Al-Si-Ti alloy containing 0.1-0.2wt.% Ti used as an IC-interconnect material reaches the electromigration strength of Al-Si-Cu and simultaneously avoids the disadvantages of Al-Si-Cu like enhanced corrosion susceptibility or dry etching problems. The stabilizing effect of Ti is demonstrated by life testing and additonally by monitoring changes of residual resistivity and heat transfer to the substrate during temperature current stress.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability\",\"authors\":\"F. Fischer, F. Neppl\",\"doi\":\"10.1109/IRPS.1984.362043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that an Al-Si-Ti alloy containing 0.1-0.2wt.% Ti used as an IC-interconnect material reaches the electromigration strength of Al-Si-Cu and simultaneously avoids the disadvantages of Al-Si-Cu like enhanced corrosion susceptibility or dry etching problems. The stabilizing effect of Ti is demonstrated by life testing and additonally by monitoring changes of residual resistivity and heat transfer to the substrate during temperature current stress.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability
It is shown that an Al-Si-Ti alloy containing 0.1-0.2wt.% Ti used as an IC-interconnect material reaches the electromigration strength of Al-Si-Cu and simultaneously avoids the disadvantages of Al-Si-Cu like enhanced corrosion susceptibility or dry etching problems. The stabilizing effect of Ti is demonstrated by life testing and additonally by monitoring changes of residual resistivity and heat transfer to the substrate during temperature current stress.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
