3D设备集成

C. E. Bauer, H. Neuhaus
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引用次数: 3

摘要

十多年来,业界已经认识到封装和子系统组装中第三维度的力量,以实现高度集成的移动电子产品。已经报道和演示了许多方法,包括基于封装堆叠的方法(封装对封装、折纸和边缘堆叠模块)和基于芯片堆叠的方法(线键、混合技术、边缘再分布和硅通孔)。硅通孔作为唯一真正的3D器件集成而不是3D封装方法脱颖而出。因此,通硅通孔技术提出了独特的机遇和挑战。例如,由于短,低阻抗互连和高硅效率,硅通孔承诺无与伦比的性能改进。另一方面,没有其他3D方法能与现有食物链的破坏相匹配。本文从工艺、应用、挑战和知识产权等方面综述了基于硅通孔的3D器件集成的挑战和机遇。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D device integration
For more than a decade the industry has recognized the power of the third dimension in package and sub-system assembly for the implementation of highly integrated mobile electronic products. Numerous approaches have been reported and demonstrated including those base on package stacking (package-on-package, origami, and edge stacked modules) and those based on die stacking (wire bond, mixed technology, edge redistribution, and through-silicon-vias). Through-silicon-vias stand out from the others as the only true 3D device integration as opposed to 3D packaging method. Consequently, through silicon via technology presents unique opportunities and challenges. For example, through-silicon-vias promise unrivaled performance improvements due to short, low impedance interconnect and high silicon efficiency. On the other hand, no other 3D approach matches the disruption of the existing food chain. This paper reviews the challenges and opportunities of 3D device integration based on through-silicon-vias in terms of, processes, applications, challenges, and intellectual property landscape.
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