E. Albuquerque, R. Bugalho, L. Oliveira, T. Niknejad, José C. Silva, A. Boletti, J. Varela
{"title":"用于CERN CMS实验的全电流模式暗噪声抑制时序电路","authors":"E. Albuquerque, R. Bugalho, L. Oliveira, T. Niknejad, José C. Silva, A. Boletti, J. Varela","doi":"10.1109/ESSCIRC55480.2022.9911529","DOIUrl":null,"url":null,"abstract":"In this paper we present an analog circuit for the new MIP Timing Detector of the CMS experiment at CERN, featuring, for the first time, a silicon implementation of the Differential Leading Edge Discriminating technique to suppress SiPM dark noise. This technique also stabilizes the baseline, leading to a time resolution of 25 ps at beginning of life and 55 ps at end of life while dissipating less than 4 mW. The full analog front-end ASIC has 32 channels and has been designed in a CMOS 130 nm technology with a total die area of 8.5 x 5.2 mm2. The radiation tolerance of this design has been confirmed by radiation tests.","PeriodicalId":168466,"journal":{"name":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Full Current-Mode Timing Circuit with Dark Noise Suppression for the CERN CMS Experiment\",\"authors\":\"E. Albuquerque, R. Bugalho, L. Oliveira, T. Niknejad, José C. Silva, A. Boletti, J. Varela\",\"doi\":\"10.1109/ESSCIRC55480.2022.9911529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present an analog circuit for the new MIP Timing Detector of the CMS experiment at CERN, featuring, for the first time, a silicon implementation of the Differential Leading Edge Discriminating technique to suppress SiPM dark noise. This technique also stabilizes the baseline, leading to a time resolution of 25 ps at beginning of life and 55 ps at end of life while dissipating less than 4 mW. The full analog front-end ASIC has 32 channels and has been designed in a CMOS 130 nm technology with a total die area of 8.5 x 5.2 mm2. The radiation tolerance of this design has been confirmed by radiation tests.\",\"PeriodicalId\":168466,\"journal\":{\"name\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC55480.2022.9911529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC55480.2022.9911529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在本文中,我们为欧洲核子研究中心CMS实验的新型MIP定时检测器设计了一个模拟电路,首次采用了差分前沿判别技术来抑制SiPM暗噪声。该技术还稳定了基线,导致寿命开始时的时间分辨率为25 ps,寿命结束时的时间分辨率为55 ps,而功耗小于4 mW。全模拟前端ASIC有32个通道,采用CMOS 130纳米技术设计,总晶片面积为8.5 x 5.2 mm2。这种设计的耐辐射性能已通过辐射试验得到证实。
A Full Current-Mode Timing Circuit with Dark Noise Suppression for the CERN CMS Experiment
In this paper we present an analog circuit for the new MIP Timing Detector of the CMS experiment at CERN, featuring, for the first time, a silicon implementation of the Differential Leading Edge Discriminating technique to suppress SiPM dark noise. This technique also stabilizes the baseline, leading to a time resolution of 25 ps at beginning of life and 55 ps at end of life while dissipating less than 4 mW. The full analog front-end ASIC has 32 channels and has been designed in a CMOS 130 nm technology with a total die area of 8.5 x 5.2 mm2. The radiation tolerance of this design has been confirmed by radiation tests.