Toshiki Kishi, M. Nagatani, S. Kanazawa, W. Kobayashi, T. Shindo, H. Yamazaki, M. Ida, K. Kurishima, H. Nosaka
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A 45-mW 50-Gb/s Linear Shunt LD Driver in 0.5-µm InP HBT Technology
The transmission capacity of Ethernet has grown rapidly. Advanced multilevel modulation schemes, such as a 4-level pulse amplitude modulation (PAM4), are being investigated as to their suitability for next-generation 400GbE. The demand is now high for a transmitter front-end with a low-power laser diode (LD) driver that is applicable to such multilevel modulations. To meet this demand, we devised a linear shunt LD driver for constructing a low-power transmitter front-end that supports PAM4. The driver was designed and fabricated by using our InP HBT technology (ft = 290 GHz, fmax = 320 GHz). The power dissipation of the driver part is lower than 45 mW at 50 Gb/s. In addition, the power dissipation of the transmitter front-end consisting of the linear shunt LD driver and LD is lower than 226 mW. Our linear shunt LD driver provides linear and high speed operation over 50 Gb/s. In addition, the driver has better power efficiency than any previously reported transmitters based on directly modulated lasers.
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