{"title":"新型无PN结的碳化硅肖特基栅双极模式场效应晶体管(SiC SBMFET)","authors":"M. Jagadesh Kumar, H. Bahl","doi":"10.1109/INDCON.2006.302798","DOIUrl":null,"url":null,"abstract":"The bipolar mode field effect transistors (BMFETs) using P+ gates on N-type silicon substrate are the most commonly used power devices for high-current medium-power switching applications and as optically controlled switches. These are dual gate devices with deep P+ gate junctions, which require large thermal cycles for diffusion. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P-type 4H silicon-carbide, a wide bandgap material, in which the PN junction gates are replaced by the Schottky gates. We have studied the characteristics of this device using two-dimensional numerical simulation. Our results demonstrate for the first time that the P-SiC Schottky-gate BMFET has very low ON voltage drop, good output characteristics, a reasonable current gain and a blocking voltage greater than 1000 V","PeriodicalId":122715,"journal":{"name":"2006 Annual IEEE India Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN Junction\",\"authors\":\"M. Jagadesh Kumar, H. Bahl\",\"doi\":\"10.1109/INDCON.2006.302798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bipolar mode field effect transistors (BMFETs) using P+ gates on N-type silicon substrate are the most commonly used power devices for high-current medium-power switching applications and as optically controlled switches. These are dual gate devices with deep P+ gate junctions, which require large thermal cycles for diffusion. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P-type 4H silicon-carbide, a wide bandgap material, in which the PN junction gates are replaced by the Schottky gates. We have studied the characteristics of this device using two-dimensional numerical simulation. Our results demonstrate for the first time that the P-SiC Schottky-gate BMFET has very low ON voltage drop, good output characteristics, a reasonable current gain and a blocking voltage greater than 1000 V\",\"PeriodicalId\":122715,\"journal\":{\"name\":\"2006 Annual IEEE India Conference\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Annual IEEE India Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INDCON.2006.302798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Annual IEEE India Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INDCON.2006.302798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN Junction
The bipolar mode field effect transistors (BMFETs) using P+ gates on N-type silicon substrate are the most commonly used power devices for high-current medium-power switching applications and as optically controlled switches. These are dual gate devices with deep P+ gate junctions, which require large thermal cycles for diffusion. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P-type 4H silicon-carbide, a wide bandgap material, in which the PN junction gates are replaced by the Schottky gates. We have studied the characteristics of this device using two-dimensional numerical simulation. Our results demonstrate for the first time that the P-SiC Schottky-gate BMFET has very low ON voltage drop, good output characteristics, a reasonable current gain and a blocking voltage greater than 1000 V