用多离子注入制备具有拆分p柱的高性能超结umosfet

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487945

Y. Miura, H. Ninomiya, K. Kobayashi

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引用次数: 18

摘要

我们提出了具有拆分p柱结构的超结UMOSFET器件(SJ-UMOS)，用于额定电压为40-75 V的汽车应用。多离子注入制备的分离式p柱由n型外延层中间距较小的p型岛组成。该结构在不牺牲SJ结构原有优点的前提下，提高了重复感应开关性能。在击穿电压为68.0 V、栅极电压为10 V时，我们实现了28.7 m/spl ω /mm/sup 2/的导通电阻。此外，我们证实了在175/spl°C下对电感开关应力的高抗扰度和良好的反向恢复性能。

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High performance superjunction UMOSFETs with split p-columns fabricated by multi-ion-implantations

We propose superjunction UMOSFET devices (SJ-UMOS) with split p-column structures for automotive applications with rated voltage of 40-75 V. The split p-column fabricated by multi-ion-implantations consists of p-type islands separated by small distances in an n-type epi-layer. This structure was designed to improve the repetitive inductive switching performance without sacrificing the original benefits of the SJ structure. We achieved a specific on-resistance of 28.7 m/spl Omega/mm/sup 2/ at a gate voltage of 10 V for breakdown voltage of 68.0 V. In addition, we confirmed high immunity against inductive switching stress at 175/spl deg/C and good reverse recovery properties.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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