采用体积驱动技术设计超低电压锁相环

Ting-Sheng Chao, Y. Lo, Wei-Bin Yang, Kuo-Hsing Cheng
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引用次数: 21

摘要

本文介绍了一种采用体积驱动技术的超低电压锁相环(PLL)。所提出的锁相环的结构采用大块输入技术来产生一个压控振荡器(VCO)和正向体偏置方案来产生一个分频器。这种方法有效地降低了mosfet的阈值电压,使锁相环能够在超低电压下工作。该芯片采用0.13 μ m标准CMOS工艺,电源电压为0.5V。测量结果表明,该锁相环可以在0.5V电源电压下工作在360 ~ 610MHz范围内。在550MHz时,测量到的有效值抖动和峰间抖动分别为8.01ps和56.36ps。该锁相环的总功耗为1.25mW,有源模面积为0.04mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Designing ultra-low voltage PLL Using a bulk-driven technique
This paper describes an ultra-low voltage phase-locked loop (PLL) using a bulk-driven technique. The architecture of the proposed PLL employs the bulk-input technique to produce a voltage-controlled oscillator (VCO) and the forward-body-bias scheme to produce a divider. This approach effectively reduces the threshold voltage of the MOSFETs, enabling the PLL to be operated at an ultra-low voltage. The chip is fabricated in a 0.13-µm standard CMOS process with a 0.5V power supply voltage. The measurement results demonstrate that this PLL can operate from 360 to 610MHz with a 0.5V power supply voltage. At 550MHz, the measured rms jitter and peak-to-peak jitter are 8.01ps and 56.36ps, respectively. The total power consumption of the PLL is 1.25mW and the active die area of PLL is 0.04mm2.
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