面向设计的FDSOI mosfet电荷简化模型

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-01 DOI:10.1109/ULIS.2018.8354764

A. Pezzotta, F. Jazaeri, H. Bohuslavskyi, L. Hutin, C. Enz

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引用次数: 2

摘要

本文提出了一种面向设计的非对称双栅(ADG) mosfet模型。在原有的简化EKV体模型中加入后门效应只需要在原有的4个参数基础上增加1个参数，并将简化EKV模型扩展到FDSOI过程。这将帮助设计师在设计参数方面找到正确的权衡，包括后门偏置。与28纳米FDSOI CMOS工艺的测量结果进行了比较，评估了所提出的优良精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A design-oriented charge-based simplified model for FDSOI MOSFETs

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified EKV model to FDSOI processes. This will help the designer to find the right trade-off in terms of design parameters, including the back-gate biasing. A comparison with measurement results from a 28-nm FDSOI CMOS process is provided, assessing the excellent accuracy of the proposed.

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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