基于电容补偿技术的k波段差分SiGe堆叠功率放大器增益增强

2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2019-08-01 DOI:10.1109/MWSCAS.2019.8885017

X. S. Loo, K. Yeo, M. Win, Zhichao Li, Xiaopeng Yu, Jer-Ming Chen

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引用次数: 1

摘要

提出了一种采用0.18μm SiGe工艺制作的20GHz差分四叠功率放大器。独特的是，在普通基级引入了2电容补偿技术，成功地将功率增益提高了2.56dB/级。基于可靠性考虑，采用级间匹配电感，并采用发射极跟随器实现输入偏置。与其他堆叠方案相比，它具有>20dB的良好增益性能，同时具有≈22dBm的竞争饱和功率，峰值PAE为26%。

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A K-Band Differential SiGe Stacked Power Amplifier Based on Capacitive Compensation Techniques for Gain Enhancements

A 20GHz differential 4-stacked power amplifier fabricated on 0.18μm SiGe technology is presented. Uniquely, 2 capacitive compensation techniques are introduced at common base stages and successfully boosting power gain by 2.56dB/stage. Inter-stage matching inductors are adopted and input biasing is achieved by emitter follower for reliability concern. It demonstrates favorable gain performance of >20dB against other stacking schemes while showing competitive saturated power of ≈22dBm with peak PAE of 26%.

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来源期刊

2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)

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