{"title":"手指型和条纹型LDMOS晶体管的雪崩耐用性分析","authors":"T. Kwon, Y.C. Choi, C.J. Kim, H. Kang, C.S. Song","doi":"10.1109/ESSDERC.2000.194758","DOIUrl":null,"url":null,"abstract":"In order to investigate how to change avalanche ruggedness according to layout type in LDMOS, the two types of structure such as finger type and stripe type were investigated. The difference of the avalanche ruggedness is due to inductor voltage difference caused by body-pinch resistance and the inductor voltage difference affects the ratio of Emax (reverse maximum holding energy of device) variation to load inductance (L) variation (= Emax / L). In this paper, we describe in detail how to optimize the layout type of LDMOS according to their load inductance (L).","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis on the Avalanche Ruggedness of Finger Type and Stripe Type LDMOS Transistor\",\"authors\":\"T. Kwon, Y.C. Choi, C.J. Kim, H. Kang, C.S. Song\",\"doi\":\"10.1109/ESSDERC.2000.194758\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to investigate how to change avalanche ruggedness according to layout type in LDMOS, the two types of structure such as finger type and stripe type were investigated. The difference of the avalanche ruggedness is due to inductor voltage difference caused by body-pinch resistance and the inductor voltage difference affects the ratio of Emax (reverse maximum holding energy of device) variation to load inductance (L) variation (= Emax / L). In this paper, we describe in detail how to optimize the layout type of LDMOS according to their load inductance (L).\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194758\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis on the Avalanche Ruggedness of Finger Type and Stripe Type LDMOS Transistor
In order to investigate how to change avalanche ruggedness according to layout type in LDMOS, the two types of structure such as finger type and stripe type were investigated. The difference of the avalanche ruggedness is due to inductor voltage difference caused by body-pinch resistance and the inductor voltage difference affects the ratio of Emax (reverse maximum holding energy of device) variation to load inductance (L) variation (= Emax / L). In this paper, we describe in detail how to optimize the layout type of LDMOS according to their load inductance (L).
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