J. Barbot, J. Coignus, N. Vaxelaire, C. Carabasse, Olivier Glorieux, M. Bedjaoui, F. Aussenac, F. Andrieu, F. Triozon, L. Grenouillet
{"title":"频率相关测量证明了MFDM堆叠中电荷俘获和极化开关之间的相互作用","authors":"J. Barbot, J. Coignus, N. Vaxelaire, C. Carabasse, Olivier Glorieux, M. Bedjaoui, F. Aussenac, F. Andrieu, F. Triozon, L. Grenouillet","doi":"10.1109/ESSCIRC55480.2022.9911485","DOIUrl":null,"url":null,"abstract":"Experimental analysis of polarization switching in metal-ferroelectric- metal and metal- ferroelectric-dielectric-metal junctions is reported. Combined GIXRD and electrical analyses demonstrate that insertion of $\\mathrm{A}1_{2}\\mathrm{O}_{3}$ dielectric layer boosts the ferroelectric polarization. Ferroelectric switching measurements at various frequencies show that the injection and trapping of charges into the ferroelectric-dielectric stack have a large influence on the polarization switching.","PeriodicalId":168466,"journal":{"name":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements\",\"authors\":\"J. Barbot, J. Coignus, N. Vaxelaire, C. Carabasse, Olivier Glorieux, M. Bedjaoui, F. Aussenac, F. Andrieu, F. Triozon, L. Grenouillet\",\"doi\":\"10.1109/ESSCIRC55480.2022.9911485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental analysis of polarization switching in metal-ferroelectric- metal and metal- ferroelectric-dielectric-metal junctions is reported. Combined GIXRD and electrical analyses demonstrate that insertion of $\\\\mathrm{A}1_{2}\\\\mathrm{O}_{3}$ dielectric layer boosts the ferroelectric polarization. Ferroelectric switching measurements at various frequencies show that the injection and trapping of charges into the ferroelectric-dielectric stack have a large influence on the polarization switching.\",\"PeriodicalId\":168466,\"journal\":{\"name\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"204 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC55480.2022.9911485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC55480.2022.9911485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements
Experimental analysis of polarization switching in metal-ferroelectric- metal and metal- ferroelectric-dielectric-metal junctions is reported. Combined GIXRD and electrical analyses demonstrate that insertion of $\mathrm{A}1_{2}\mathrm{O}_{3}$ dielectric layer boosts the ferroelectric polarization. Ferroelectric switching measurements at various frequencies show that the injection and trapping of charges into the ferroelectric-dielectric stack have a large influence on the polarization switching.
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