用于半导体结构量化的数字全息技术(会议报告)

V. Trivedi, N. Patel, M. Joglekar, V. Chhaniwal, Seonoh Lee, A. Anand
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引用次数: 1

摘要

数字全息干涉测量(DHI)和数字全息干涉显微镜(DHIM)是提供波前与物体相互作用的全场信息的工具。这种成像方式可以成为技术对象(如半导体样品)定量相位成像的理想工具。通过对全息图的相位信息进行数值重建,可以提取样品的厚度/高度。通常用DHI和DHIM在透射模式下测定被测样品的光学厚度。在反射模式下,这种成像技术提供了样品的高度。对于半导体工业来说,确定物体结构的高度/厚度以及物体结构中缺陷的量化是一个重要问题。可用于半导体薄膜、微/纳米柱、LED显示屏、液晶面板、用于保护这些结构的覆盖玻璃等的厚度和缺陷测定。数字全息干涉测量方法(反射和透射)可以用来设计设备,可以作为快速,单镜头技术定量相位成像这些样品。与基于强度的测量系统相比,这种装置可以提供更多关于样品的信息。此外,紧凑的数字全息干涉测量系统可以部署在这类设备的生产线上,以提供实时信息。我们参与设计和开发用于检测半导体晶圆,薄膜,显示器和覆盖此类样品的玻璃板的数字全息设备。我们已经在无镜头模式(DHI的情况下)和在反射和传输模式下使用成像镜头(DHIM的情况下)实现了数字全息设备。DHI提供相当于传感器尺寸的视场,而DHIM技术通过不同的放大倍数实现,从而提供不同的样品视场。在DHI的情况下,通过衍射积分的数值实现了从全息图平面(记录全息图的数字阵列所在的平面)到最佳聚焦平面(物体平面)的传播。在DHIM中,用于记录全息图的数字阵列位于放大/去放大透镜的像面上。因此,整个数值重建过程简化为傅立叶条纹分析,使得该技术计算量少,速度快,准实时。开发的设备使用已知的物体进行校准,然后在不同的样品上进行测试。所得结果令人鼓舞。在本文中,我们描述了我们在设计、开发和制造用于半导体样品检测的数字全息装置方面所做的努力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Digital holography for quantification of semiconductor structures (Conference Presentation)
Digital holography interferometry (DHI) and digital holographic interference microscopy (DHIM) are tools that provide whole field information of the wavefront interacting with the object. This imaging modality can be an ideal tool for quantitative phase imaging of technical objects such as semiconductor samples. The phase information numerically reconstructed from the holograms can lead to extraction of the thickness/height of the sample. Usually DHI and DHIM are used in transmission mode for determination of optical thickness of the sample under investigation. In reflection mode this imaging techniques provide height of the sample. For the semiconductor industry determination of height/thickness of object structures as well as the quantification of defects in the object structures is an important issue. The thickness and defect determination can be that of semiconductor thin films, micro/nano-pillars, LED displays, liquid crystal panels, the cover glasses used for protection of these structures etc. Digital holographic interferometric method (both reflection and transmission) can be used to design devices that can act as a fast, single shot technique for quantitative phase imaging of such samples. Such devices can provide more information about the sample compared to intensity based measurement systems. Also compact the digital holographic interferometric systems can be deployed in the manufacturing line of such devices to provide real time information. We are involved in the design and development of digital holographic devices for inspection of semi-conductor wafers, thin films, displays and glass plates covering such samples. We have implemented digital holographic devices in the lens-less mode (in the case of DHI) and also with the use of an imaging lens (in the case of DHIM) both in reflection and transmission mode. DHI provides field of view equivalent to the sensor size, while DHIM technique was implemented with different magnifications, thereby providing varying field of views of the sample. Also in the case of DHI a propagation from the hologram plane (the plane at which the digital array for recording the hologram was situated) to the best focus plane (object plane) was realized by numerical implementation of diffraction integral. In DHIM, the digital array used for recording the hologram was at the image plane of the magnifying/de-magnifying lens. So the whole numerical reconstruction process reduced to Fourier fringe analysis, making the technique less computationally exhaustive, fast and quasi real-time. The developed devices were calibrated using known objects and then tested on different samples. The obtained results are found to be encouraging. In this paper, we describe our efforts in design, development and fabrication of digital holographic devices for the inspection of semiconductor samples.
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