用于内置测试信号生成的低功耗温度补偿弛豫振荡器

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2015-10-01 DOI:10.1109/MWSCAS.2015.7282022

Li Xu, M. Onabajo

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引用次数: 9

摘要

提出了一种用于内置测试和校准应用的片上频率参考。该设计结合了比例绝对温度(PTAT)电流基准和弛豫振荡器核心。仿真结果表明，基于热电压的温度补偿方案对工艺变化的敏感性较低。设计并仿真了该振荡器，采用130nm CMOS工艺，电源电压为1.2V。它产生40KHz输出，占用0.025mm2的布局面积。在-30°C至85°C的范围内，温度系数为101ppm/°C。在10KHz偏移时，模拟相位噪声为-90dBc/Hz。

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A low-power temperature-compensated relaxation oscillator for built-in test signal generation

An on-chip frequency reference for built-in testing and calibration applications is presented. The design combines a proportional-to-absolute-temperature (PTAT) current reference and a relaxation oscillator core. A temperature compensation scheme is realized based on the thermal voltage, for which simulations indicate low sensitivity to process variations. The oscillator was designed and simulated in a 130nm CMOS process with a power supply of 1.2V. It generates a 40KHz output and occupies a layout area of 0.025mm2. A temperature coefficient of 101ppm/°C is achieved over the range from -30°C to 85°C. The simulated phase noise is -90dBc/Hz at 10KHz offset.

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2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)

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