{"title":"用于蘑菇型激光器的氢化铁- vpe","authors":"R. Gobel, H. Janning, H. Burkhard","doi":"10.1109/SIM.1992.752687","DOIUrl":null,"url":null,"abstract":"Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"S.I. InP:Fe Hydride-Vpe for Mushroom Type Lasers\",\"authors\":\"R. Gobel, H. Janning, H. Burkhard\",\"doi\":\"10.1109/SIM.1992.752687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.
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