{"title":"使用砷化镓蒙特卡罗模型的负阻振荡器的计算机模拟","authors":"R. Warriner","doi":"10.1049/IJ-SSED:19770012","DOIUrl":null,"url":null,"abstract":"A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Computer simulation of negative-resistance oscillators using a Monte-Carlo model of gallium arsenide\",\"authors\":\"R. Warriner\",\"doi\":\"10.1049/IJ-SSED:19770012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19770012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19770012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computer simulation of negative-resistance oscillators using a Monte-Carlo model of gallium arsenide
A gallium arsenide diode structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space, and three dimensions in k-space, with a full description of the material scattering cross-section, which is implemented using Monte-Carlo techniques. Detailed information about electric field and valley population profiles is presented for both dipole domain, and l.s.a. modes of operation. Comparison is made with the widely differing previous theoretical results.
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